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Beëiniging mei lead
Beëiniging mei lead
Beëiniging mei lead
Wichtichste technyske spesifikaasjes:
Rated krêft: 5-800W;
Substraatmaterialen: BeO, AlN, Al2O3
Nominale wjerstânswearde: 50Ω
Fersetstolerânsje: ± 5%, ± 2%, ± 1%
temperatuerkoëffisjint: <150ppm/℃
Bedriuwstemperatuer: -55 ~ + 150 ℃
ROHS-standert: Foldocht oan
Tapaste standert: Q/RFTYTR001-2022
Leadlingte: L lykas oanjûn yn it datasheet
(kin oanpast wurde neffens klanteasken)
| Krêft(W) | Frekwinsje | Ofmjittings (ienheid: mm) | SubstraatMateriaal | Gegevensblêd (PDF) | |||||
| A | B | H | G | W | L | ||||
| 5W | 6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-05TM0404 |
| 11GHz | 1.27 | 2.54 | 0.5 | 1.0 | 0.8 | 3.0 | AlN | RFT50N-05TJ1225 | |
| 10W | 4GHz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-10TM2550 |
| 6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50A-10TM0404 | |
| 8GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-10TM0404 | |
| 10GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-10TM5035 | |
| 18GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-10TM5023 | |
| 20W | 4GHz | 2.5 | 5.0 | 1.0 | 1.9 | 1.0 | 4.0 | BeO | RFT50-20TM2550 |
| 6GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | Al2O3 | RFT50N-20TJ0404 | |
| 8GHz | 4.0 | 4.0 | 1.0 | 1.6 | 1.0 | 3.0 | BeO | RFT50-20TM0404 | |
| 10GHz | 5.0 | 3.5 | 1.0 | 1.9 | 1.0 | 3.0 | BeO | RFT50-20TM5035 | |
| 18GHz | 5.0 | 2.5 | 1.0 | 1.8 | 1.0 | 3.0 | BeO | RFT50-20TM5023 | |
| 30W | 6GHz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | AlN | RFT50N-30TJ0606 |
| 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-30TM0606 | ||
| 60W | 6GHz | 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | AlN | RFT50N-60TJ0606 |
| 6.0 | 6.0 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TM0606 | ||
| 6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-60TJ6363 | ||
| 100W | 3GHz | 6.35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | AlN | RFT50N-100TJ6395 |
| 8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | AlN | RFT50N-100TJ8957 | ||
| 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-100TJ9595 | ||
| 4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-100TJ1010 | |
| 6GHz | 6.35 | 6.35 | 1.0 | 1.8 | 1.0 | 5.0 | BeO | RFT50-100TJ6363 | |
| 8.9 | 5.7 | 1.0 | 1.6 | 1.0 | 5.0 | AlN | RFT50N-100TJ8957B | ||
| 8GHz | 9.0 | 6.0 | 1.5 | 2.0 | 1.0 | 5.0 | BeO | RFT50-100TJ0906C | |
| 150W | 3GHz | 6.35 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | AlN | RFT50N-150TJ6395 |
| 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-150TJ9595 | ||
| 4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-150TJ1010 | |
| 6GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-150TJ1010B | |
| 200W | 3GHz | 9.5 | 9.5 | 1.0 | 1.6 | 1.4 | 5.0 | BeO | RFT50-200TJ9595 |
| 4GHz | 10.0 | 10.0 | 1.0 | 1.8 | 1.4 | 5.0 | BeO | RFT50-200TJ1010 | |
| 10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-200TM1313B | |
| 250W | 3GHz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-250TM1210 |
| 10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-250TM1313B | |
| 300W | 3GHz | 12.0 | 10.0 | 1.5 | 2.5 | 1.4 | 5.0 | BeO | RFT50-300TM1210 |
| 10GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-300TM1313B | |
| 400W | 2GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-400TM1313 |
| 500W | 2GHz | 12.7 | 12.7 | 2.0 | 3.5 | 2.4 | 5.0 | BeO | RFT50-500TM1313 |
| 800W | 1GHz | 25.4 | 25.4 | 3.2 | 4 | 6 | 7 | BeO | RFT50-800TM2525 |
Oersicht
Leaded-terminaasje wurdt makke troch it selektearjen fan passende substraatgrutte en materialen op basis fan ferskate frekwinsjeeasken en stroomeasken, fia wjerstân, circuitprintsjen en sinterjen. De faak brûkte substraatmaterialen kinne benammen berylliumokside, aluminiumnitride, aluminiumokside of materialen mei bettere waarmteôffier wêze.
Leaded Termination, ferdield yn tinne filmproses en dikke filmproses. It is ûntworpen op basis fan spesifike krêft- en frekwinsjeeasken, en dan ferwurke troch it proses. As jo spesjale behoeften hawwe, nim dan kontakt op mei ús ferkeappersoniel om spesifike oplossingen foar oanpassing te bieden.
